PATTERNED QUANTUM WELL SEMICONDUCTOR-LASER ARRAYS

被引：19
作者：
KAPON, E
HARBISON, JP
YUN, CP
FLOREZ, LT
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 04期
关键词：
D O I：
10.1063/1.100994
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：304 / 306
页数：3
相关论文
共 13 条
[1]   HIGH-POWER WITH HIGH-EFFICIENCY IN A NARROW SINGLE-LOBED BEAM FROM A DIODE-LASER ARRAY IN AN EXTERNAL CAVITY [J].
CHANGHASNAIN, CJ ;
BERGER, J ;
SCIFRES, DR ;
STREIFER, W ;
WHINNERY, JR ;
DIENES, A .
APPLIED PHYSICS LETTERS, 1987, 50 (21) :1465-1467
[2]   COMPUTER-APPLICATIONS FOR FIBER OPTICS [J].
CROW, JD .
IEEE COMMUNICATIONS MAGAZINE, 1985, 23 (02) :16-20
[3]   LOW-THRESHOLD GAIN-GUIDED COUPLED-STRIPE QUANTUM-WELL DIODE-LASERS BY LASER-ASSISTED PROCESSING [J].
EPLER, JE ;
BURNHAM, RD ;
PAOLI, TL .
APPLIED PHYSICS LETTERS, 1987, 51 (08) :558-560
[4]   INCORPORATION RATES OF GALLIUM AND ALUMINUM ON GAAS DURING MOLECULAR-BEAM EPITAXY AT HIGH SUBSTRATE TEMPERATURES [J].
FISCHER, R ;
KLEM, J ;
DRUMMOND, TJ ;
THORNE, RE ;
KOPP, W ;
MORKOC, H ;
CHO, AY .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (05) :2508-2510
[5]   LOW-THRESHOLD PATTERNED QUANTUM WELL LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAPON, E ;
YUN, CP ;
HARBISON, JP ;
FLOREZ, LT ;
STOFFEL, NG .
ELECTRONICS LETTERS, 1988, 24 (16) :985-986
[6]   MOLECULAR-BEAM EPITAXY OF GAAS/ALGAAS SUPERLATTICE HETEROSTRUCTURES ON NONPLANAR SUBSTRATES [J].
KAPON, E ;
TAMARGO, MC ;
HWANG, DM .
APPLIED PHYSICS LETTERS, 1987, 50 (06) :347-349
[7]   PATTERNED QUANTUM WELL SEMICONDUCTOR INJECTION-LASER GROWN BY MOLECULAR-BEAM EPITAXY [J].
KAPON, E ;
HARBISON, JP ;
YUN, CP ;
STOFFEL, NG .
APPLIED PHYSICS LETTERS, 1988, 52 (08) :607-609
[8]   DIFFRACTION COUPLED PHASE-LOCKED SEMICONDUCTOR-LASER ARRAY [J].
KATZ, J ;
MARGALIT, S ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1983, 42 (07) :554-556
[9]   ULTIMATE LIMIT IN LOW THRESHOLD QUANTUM WELL GAALAS SEMICONDUCTOR-LASERS [J].
LAU, KY ;
DERRY, PL ;
YARIV, A .
APPLIED PHYSICS LETTERS, 1988, 52 (02) :88-90
[10]  
MANNOH M, 1985, APPL PHYS LETT, V47, P726
12