ROLE OF SEQUENTIAL ANNEALING, OXIDATION, AND DIFFUSION UPON DEFECT GENERATION IN ION-IMPLANTED SILICON SURFACES

被引：59

作者：

PRUSSIN, S ^{[1
]}

机构：

[1] TRW SEMICOND,LAWNDALE,CA 90260

来源：

JOURNAL OF APPLIED PHYSICS | 1974年 / 45卷 / 04期

关键词：

D O I：

10.1063/1.1663468

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1635 / 1642

页数：8

共 12 条

[1]

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[2]

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[3]

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[8] GENERATION OF STACKING-FAULTS AND DISLOCATION LOOPS IN SILICON WAFERS [J].

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[9]

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[10] DISLOCATION LOOP NUCLEATION IN IRRADIATED METALS [J].

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