NEW PHOTOLUMINESCENCE EFFECTS OF CARRIER CONFINEMENT AT AN ALGAAS/GAAS HETEROJUNCTION INTERFACE

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[3] BLUGSEN HJA, 1979, SOLID STATE ELECTRON, V22, P573

[4] CAINE EJ, 1984, APPL PHYS LETT, V45, P9

[5] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 263 - 266

[6] DINGLE R, 1969, PHYS REV, V184, P3

[7] GOBEL EO, COMMUNICATION

[8] HETEROSTRUCTURE DEVICES - A DEVICE PHYSICIST LOOKS AT INTERFACES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 543 - 576

[9] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[10] COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1983, 32 (03) : 285 - 359

[1] EXPERIMENTS ON GE-GAAS HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) : 341 - &

[2] Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[3] BLUGSEN HJA, 1979, SOLID STATE ELECTRON, V22, P573

[4] CAINE EJ, 1984, APPL PHYS LETT, V45, P9

[5] SIMPLIFIED MODEL FOR GRADED-GAP HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1975, 18 (03) : 263 - 266

[6] DINGLE R, 1969, PHYS REV, V184, P3

[7] GOBEL EO, COMMUNICATION

[8] HETEROSTRUCTURE DEVICES - A DEVICE PHYSICIST LOOKS AT INTERFACES [J]. SURFACE SCIENCE, 1983, 132 (1-3) : 543 - 576

[9] N-N SEMICONDUCTOR HETEROJUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1963, 6 (02) : 121 - 132

[10] COMPOSITIONAL AND DOPING SUPER-LATTICES IN III-V-SEMICONDUCTORS [J]. ADVANCES IN PHYSICS, 1983, 32 (03) : 285 - 359