CALCULATED SHALLOW-DONOR-LEVEL BINDING-ENERGIES IN GAAS-ALXGA1-XAS QUANTUM WELLS

被引：35

作者：

STOPA, M

DASSARMA, S

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.40.8466

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8466 / 8472

页数：7

共 9 条

[1] HYDROGENIC IMPURITY STATES IN A QUANTUM WELL - A SIMPLE-MODEL [J].

BASTARD, G .

PHYSICAL REVIEW B, 1981, 24 (08) :4714-4722

[2] HYDROGENIC-IMPURITY GROUND-STATE IN GAAS-GA1-XALXAS MULTIPLE QUANTUM-WELL STRUCTURES [J].

CHAUDHURI, S .

PHYSICAL REVIEW B, 1983, 28 (08) :4480-4488

[3] ENERGY-LEVELS OF HYDROGENIC IMPURITY STATES IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES [J].

GREENE, RL ;

BAJAJ, KK .

SOLID STATE COMMUNICATIONS, 1983, 45 (09) :825-829

[4] SHALLOW IMPURITY CENTERS IN SEMICONDUCTOR QUANTUM WELL STRUCTURES [J].

GREENE, RL ;

BAJAJ, KK .

SOLID STATE COMMUNICATIONS, 1985, 53 (12) :1103-1108

[5] SHALLOW IMPURITY STATES IN SILICON AND GERMANIUM [J].

KOHN, W .

SOLID STATE PHYSICS-ADVANCES IN RESEARCH AND APPLICATIONS, 1957, 5 :257-320

[6] ENERGY-SPECTRA OF DONORS IN GAAS-GA1-XALXAS QUANTUM WELL STRUCTURES IN THE EFFECTIVE-MASS APPROXIMATION [J].

MAILHIOT, C ;

CHANG, YC ;

MCGILL, TC .

PHYSICAL REVIEW B, 1982, 26 (08) :4449-4457

[7] RAMAN-SCATTERING FROM ELECTRONS BOUND TO SHALLOW DONORS IN GAAS-ALXGA1-XAS QUANTUM-WELL STRUCTURES [J].

SHANABROOK, BV ;

COMAS, J ;

PERRY, TA ;

MERLIN, R .

PHYSICAL REVIEW B, 1984, 29 (12) :7096-7098

[8] PHOTOLUMINESCENCE FROM SPIKE DOPED HYDROGENIC DONORS IN AL0.3GA0.7AS-GAAS QUANTUM WELLS [J].

SHANABROOK, BV ;

COMAS, J .

SURFACE SCIENCE, 1984, 142 (1-3) :504-508

[9] INFLUENCE OF CHARGED IMPURITIES ON SI INVERSION-LAYER ELECTRONS [J].

VINTER, B .

PHYSICAL REVIEW B, 1982, 26 (12) :6808-6825

← 1 →