ELECTRICAL CONDUCTION IN AMORPHOUS SILICON AND GERMANIUM

被引：130
作者：
WALLEY, PA
机构：
来源：
THIN SOLID FILMS | 1968年 / 2卷 / 04期
关键词：
D O I：
10.1016/0040-6090(68)90038-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Evaporated films of amorphous silicon and germanium have been prepared under a wide range of deposition conditions. When deposited on glass substrates at high rates and in vacua better than 1 × 10-5 torr both materials showed the same level and temperature dependence of electrical conductivity in the interval 60-300 °K. Amorphous silicon layers displayed a similar form of time and field dependence of the conduction as has been previously observed for amorphous germanium. © 1968.
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页码：327 / &
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