MORPHOLOGY STUDIES OF GAAS EPITAXIAL LAYERS GROWN BY PLASMA-ENHANCED MOCVD

被引：0

作者：

SHEN, Q

MONGOL, N

HUELSMAN, A

YOON, E

REIF, R

机构：

[1] NEI MONGOL INST MET RES,BAOTOU,PEOPLES R CHINA

[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期

关键词：

D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：C485 / C485

页数：1

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