MORPHOLOGY STUDIES OF GAAS EPITAXIAL LAYERS GROWN BY PLASMA-ENHANCED MOCVD

被引：0
|
作者：
SHEN, Q
MONGOL, N
HUELSMAN, A
YOON, E
REIF, R
机构：
[1] NEI MONGOL INST MET RES,BAOTOU,PEOPLES R CHINA
[2] MIT,DEPT ELECT ENGN & COMP SCI,CAMBRIDGE,MA 02139
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1987年 / 134卷 / 8B期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
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页码：C485 / C485
页数：1
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