OPTICAL DEGRADATION OF A-SI-H FILMS WITH DIFFERENT MORPHOLOGY

被引：8

作者：

OHAGI, H

YAMAZAKI, M

NAKATA, J

IMAO, S

SHIRAFUJI, J

FUJIBAYASHI, K

INUISHI, Y

机构：

[1] KINKI UNIV,FAC SCI & TECHNOL,DEPT ELECT ENGN,HIGASHIOSAKA,OSAKA 577,JAPAN

[2] OSAKA UNIV,FAC ENGN,DEPT ELECT ENGN,SUITA,OSAKA 565,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 05期

关键词：

HYDROGEN - PHOTOCONDUCTIVITY - PLASMAS - Applications - SEMICONDUCTOR MATERIALS - Chemical Vapor Deposition;

D O I：

10.1143/JJAP.27.L916

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical degradation (Staebler-Wronski (SW) effect) of a-Si:H films prepared by plasma CVD has been studied in connection with the morphological inhomogeneity of the films. The relative degradation rate of cubic photoconductivity alpha widely varied with deposition substrate temperature T//s and had its maximum at T//s equals 200 to approx. 250 degree C. In the films of both the lower and higher T//s, alpha decreased due to the increase of stable dangling bonds in the former and the decrease of weak bonds in the latter. The SW effect was hardly observed in mu c-Si:H deposited from highly diluted silane with hydrogen.

引用

页码：L916 / L918

页数：3

共 14 条

[1]

CHENEVASPAULE A, 1984, SEMICONDUCT SEMIMET, V21, pCH12

[2] EFFECT OF SUBSTRATE-TEMPERATURE ON THE NUCLEATION OF GLOW-DISCHARGE HYDROGENATED AMORPHOUS-SILICON [J].

COLLINS, RW ;

CAVESE, JM .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1207-1209

[3] LIGHT-INDUCED DEGRADATION AND THERMAL RECOVERY OF THE PHOTOCONDUCTIVITY IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].

ESER, E .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (10) :3508-3515

[4]

OHAGI H, 1987 PVSEC 3 TOK, P671

[5] STRUCTURE OF AMORPHOUS (GE,SI)1-XYX ALLOYS [J].

PHILLIPS, JC .

PHYSICAL REVIEW LETTERS, 1979, 42 (17) :1151-1154

[6] CRITICAL DENSITY IN PERCOLATION PROCESSES [J].

SCHER, H ;

ZALLEN, R .

JOURNAL OF CHEMICAL PHYSICS, 1970, 53 (09) :3759-&

[7] TIME-OF-FLIGHT MEASUREMENT OF UNDOPED GLOW-DISCHARGED A-SI-H [J].

SHIRAFUJI, J ;

MATSUI, H ;

INUISHI, Y ;

HAMAKAWA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (05) :775-779

[8] EFFECT OF SUBSTRATE-TEMPERATURE ON PROPERTIES OF GLOW-DISCHARGED HYDROGENATED AMORPHOUS-SILICON [J].

SHIRAFUJI, J ;

KUWAGAKI, M ;

SATO, T ;

INUISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (10) :1278-1286

[9] STEADY-STATE PHOTOCONDUCTIVITY IN GLOW-DISCHARGED AMORPHOUS HYDROGENATED SILICON [J].

SHIRAFUJI, J ;

KUWAGAKI, M ;

NAGATA, S .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 72 (2-3) :199-210

[10] EFFECTS OF HYDROGEN DILUTION OF SILANE ON PROPERTIES OF GLOW-DISCHARGED UNDOPED HYDROGENATED SILICON [J].

SHIRAFUJI, J ;

NAGATA, S ;

KUWAGAKI, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1986, 25 (03) :336-344

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