CALCULATIONS OF THE COMMONLY NEGLECTED TERMS IN THE MATRIX ELEMENT FOR AUGER AND IMPACT IONIZATION PROCESSES IN SEMICONDUCTORS

被引：15

作者：

BRAND, S

ABRAM, RA

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1984年 / 17卷 / 22期

关键词：

D O I：

10.1088/0022-3719/17/22/007

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：L571 / L574

页数：4

共 10 条

[1] AUGER EFFECT IN SEMICONDUCTORS [J].

BEATTIE, AR ;

LANDSBERG, PT .

PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1959, 249 (1256) :16-29

[2] CALCULATIONS OF OVERLAP INTEGRALS FOR AUGER PROCESSES INVOLVING DIRECT BAND-GAP SEMICONDUCTORS [J].

BRAND, S ;

ABRAM, RA .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (07) :L201-L206

[3]

BRAND S, 1983, UNPUB

[4] OVERLAP INTEGRALS FOR AUGER RECOMBINATION IN DIRECT GAP III-V SEMICONDUCTORS - CALCULATIONS FOR CONDUCTION AND HEAVY HOLE BAND STATES WITH WAVEVECTORS ALONG THE (001) DIRECTION IN GAAS AND INP [J].

BURT, MG ;

SMITH, C .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1984, 17 (02) :L47-L52

[5] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS [J].

CHELIKOWSKY, JR ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 14 (02) :556-582

[6] AUGER RECOMBINATION IN DIRECT-GAP SEMICONDUCTORS - BAND-STRUCTURE EFFECTS [J].

HAUG, A .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (21) :4159-4172

[7]

JAROS M, 1982, DEEP LEVELS SEMICOND, P82

[8] BAND-STRUCTURE DEPENDENCE OF IMPACT IONIZATION BY HOT CARRIERS IN SEMICONDUCTORS - GAAS [J].

PEARSALL, T ;

CAPASSO, F ;

NAHORY, RE ;

POLLACK, MA ;

CHELIKOWSKY, JR .

SOLID-STATE ELECTRONICS, 1978, 21 (01) :297-302

[9] DIELECTRIC FUNCTION IN ZINCBLENDE SEMICONDUCTORS [J].

VINSOME, PKW ;

RICHARDSON, D .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1971, 4 (16) :2650-+

[10] WAVE-VECTOR-DEPENDENT DIELECTRIC FUNCTION FOR SI, GE, GAAS, AND ZNSE [J].

WALTER, JP ;

COHEN, ML .

PHYSICAL REVIEW B, 1970, 2 (06) :1821-&

← 1 →