MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331)

被引：19

作者：

UPPAL, PN

AHEARN, JS

MUSSER, DP

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期

关键词：

D O I：

10.1063/1.339241

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3766 / 3771

页数：6

共 12 条

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[3]

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[6] ALLOY CLUSTERING IN GA1-XALXAS COMPOUND SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[7] CHARACTERIZATION OF HIGH-PURITY SI-DOPED MOLECULAR-BEAM EPITAXIAL GAAS [J].

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JOURNAL OF APPLIED PHYSICS, 1985, 58 (12) :4685-4702

[8] MOLECULAR-BEAM-EPITAXIAL GROWTH AND SELECTED PROPERTIES OF GAAS-LAYERS AND GAAS (AL,GA)AS SUPERLATTICES WITH THE (211) ORIENTATION [J].

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JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :488-494

[9] INSTABILITIES OF (110) III-V COMPOUNDS GROWN BY MOLECULAR-BEAM EPITAXY [J].

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[10]

WANG WI, 1985, APPL PHYS LETT, V47, P825

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