MOLECULAR-BEAM EPITAXIAL-GROWTH OF GAAS(331)

被引：19
|
作者：
UPPAL, PN
AHEARN, JS
MUSSER, DP
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 09期
关键词：
D O I：
10.1063/1.339241
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：3766 / 3771
页数：6
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