HIGH-PERFORMANCE TRANSISTORS WITH ARSENIC-IMPLANTED POLYSIL EMITTERS

被引：106

作者：

GRAUL, J ^{[1
]}

GLASL, A ^{[1
]}

MURRMANN, H ^{[1
]}

机构：

[1] SIEMENS AG,WERK HALBLEITER,MUNICH,FED REP GER

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1976年 / 11卷 / 04期

关键词：

D O I：

10.1109/JSSC.1976.1050764

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：491 / 495

页数：5

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