GAS SOURCE MBE GROWTH OF GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR WITH A CARBON DOPED BASE USING ONLY GASEOUS SOURCES

被引：14

作者：

SANDHU, A

FUJII, T

ANDO, H

TAKAHASHI, T

ISHIKAWA, H

OKAMOTO, N

YOKOYAMA, N

机构：

[1] Fujitsu Laboratories Ltd., Atsugi, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 03期

关键词：

GSMBE; CBE; MOMBE; CARBON; DISILANE; TRIMETHYLGALLIUM; HBT;

D O I：

10.1143/JJAP.30.464

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the first growth of a GaAs/Al0.2Ga0.8As heterojunction bipolar transistor by gas source MBE using only gaseous sources. The p-type GaAs base layer was carbon doped using trimethylgallium (p = 4 x 10(19) cm-3) and the n-type Al0.2Ga0.8As emitter layer was silicon doped (n = 9 x 10(17) cm-3) using uncracked disilane. A dc current gain of 40 was obtained at a current density of 50 A/cm2.

引用

页码：464 / 465

页数：2

共 6 条

[1] DOPING CHARACTERISTICS OF GAS-SOURCE MBE-GROWN NORMAL-ALXGA1-XAS (X=0-0.28) DOPED USING DISILANE [J].

FUJII, T ;

SANDHU, A ;

ANDO, H ;

KATAOKA, Y ;

ISHIKAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (11) :2386-2387

[2] METALORGANIC GAS CONTROL-SYSTEM FOR GAS SOURCE MOLECULAR-BEAM EPITAXY [J].

ISHIKAWA, H ;

ANDO, H ;

KONDO, K ;

SANDHU, A ;

MIYAUCHI, E ;

FUJII, T ;

HIYAMIZU, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1990, 8 (02) :805-810

[3] CHARACTERIZATION OF P-TYPE GAAS HEAVILY DOPED WITH CARBON GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY [J].

SAITO, K ;

TOKUMITSU, E ;

AKATSUKA, T ;

MIYAUCHI, M ;

YAMADA, T ;

KONAGAI, M ;

TAKAHASHI, K .

JOURNAL OF APPLIED PHYSICS, 1988, 64 (08) :3975-3979

[4] A STUDY OF COLD DOPANT SOURCES FOR GAS SOURCE MBE - THE USE OF DISILANE AS AN N-TYPE DOPANT OF ALXGA1-XAS (X=0-0.28) AND TRIMETHYLGALLIUM AS A P-TYPE DOPANT OF GAAS [J].

SANDHU, A ;

FUJII, T ;

ANDO, H ;

ISHIKAWA, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (07) :L1033-L1035

[5] ANOMALOUS SILICON AND TIN DOPING BEHAVIOR IN INDIUM-PHOSPHIDE GROWN BY CHEMICAL BEAM EPITAXY [J].

SKEVINGTON, PJ ;

ANDREWS, DA ;

DAVIES, GJ .

APPLIED PHYSICS LETTERS, 1990, 56 (16) :1546-1548

[6]

TSANG WT, 1989, VLSI ELECTRONICS MIC, V21, pCH6

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