EFFECT OF THE ANNEALING AMBIENT ON THE REDISTRIBUTION OF BORON IMPLANTED INTO SILICON

被引：0
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作者：
BURENKOV, AF
KOMAROV, FF
KURYAZOV, VD
TEMKIN, MM
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来源：
SOVIET MICROELECTRONICS | 1988年 / 17卷 / 03期
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码：144 / 148
页数：5
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