POLYSILICON SIO2 INTERFACE MICROTEXTURE AND DIELECTRIC-BREAKDOWN

被引：52

作者：

MARCUS, RB

SHENG, TT

LIN, P

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 06期

关键词：

D O I：

10.1149/1.2124119

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1282 / 1289

页数：8

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