SPACE-CHARGE-LIMITED CURRENTS IN SOLIDS FOR VARIOUS GEOMETRIES AND FIELD-DEPENDENT MOBILITY

被引:19
作者
LEE, DH
NICOLET, MA
机构
关键词
D O I
10.1016/0038-1101(65)90052-3
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:182 / &
相关论文
共 7 条
[1]   EXPERIMENTAL INVESTIGATIONS OF SINGLE INJECTION IN COMPENSATED SILICON AT LOW TEMPERATURES [J].
GREGORY, BL ;
JORDAN, AG .
PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 134 (5A) :1378-&
[2]  
GUNN JB, 1957, PROGRESS SEMICONDUCT, V2, P211
[3]  
Gurney R. W., 1940, ELECT PROCESSES IONI, P172
[4]  
IVEY HF, 1954, ADV ELECTRON, V6, P137
[5]   HOT AND WARM ELECTRONS - A REVIEW [J].
KOENIG, SH .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :227-234
[6]  
MELTZER B, 1960, J ELECTRON CONTR, V8, P171
[7]   IMPEDANCE OF SPACE-CHARGE-LIMITED CURRENTS WITH FIELD-DEPENDENT MOBILITY [J].
SHUMKA, A ;
NICOLET, MA .
SOLID-STATE ELECTRONICS, 1964, 7 (01) :106-107