SIMULATION OF MANY-ELECTRON CORRELATIONS IN A RESONANT-TUNNELING DIODE

被引：14
|
作者：
NAKANO, A [1 ]
VASHISHTA, P [1 ]
KALIA, RK [1 ]
机构：
[1] LOUISIANA STATE UNIV, DEPT PHYS & ASTRON, BATON ROUGE, LA 70803 USA
来源：
PHYSICAL REVIEW B | 1991年 / 43卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.43.9066
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We study the tunneling-current characteristics of a double-barrier resonant-tunneling diode connected to an electron reservoir. The dynamics of electrons in the reservoir is treated explicitly in the framework of the time-dependent density-functional theory. It is found that Coulomb correlations give rise to plasmon-assisted tunneling.
引用
收藏
页码：9066 / 9069
页数：4
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