ASYMMETRICAL CHARACTERISTICS IN LDD AND MINIMUM-OVERLAP MOSFETS

被引：43

作者：

CHAN, TY ^{[1
]}

WU, AT ^{[1
]}

KO, PK ^{[1
]}

HU, CM ^{[1
]}

RAZOUK, RR ^{[1
]}

机构：

[1] FAIRCHILD RES CTR,PALO ALTO,CA 94304

来源：

IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 01期

关键词：

D O I：

10.1109/EDL.1986.26277

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：16 / 19

页数：4

共 6 条

[1] STRUCTURE-ENHANCED MOSFET DEGRADATION DUE TO HOT-ELECTRON INJECTION [J].

HSU, FC ;

GRINOLDS, HR .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (03) :71-74

[2] A NEW SUBSTRATE AND GATE CURRENT PHENOMENON IN SHORT-CHANNEL LDD AND MINIMUM OVERLAP DEVICES [J].

HUI, J ;

HSU, FC ;

MOLL, J .

IEEE ELECTRON DEVICE LETTERS, 1985, 6 (03) :135-138

[3]

KATTO H, 1984 IEDM, P774

[4]

KO PK, 1984 IEDM, P88

[5] DESIGN AND CHARACTERISTICS OF THE LIGHTLY DOPED DRAIN-SOURCE (LDD) INSULATED GATE FIELD-EFFECT TRANSISTOR [J].

OGURA, S ;

TSANG, PJ ;

WALKER, WW ;

CRITCHLOW, DL ;

SHEPARD, JF .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1359-1367

[6] CORRELATION BETWEEN SUBSTRATE AND GATE CURRENTS IN MOSFETS [J].

TAM, S ;

KO, PK ;

HU, CM ;

MULLER, RS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1740-1744

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