ON THE STRUCTURAL MODEL OF CVD A-SI-O-H FILMS

被引：3

作者：

OTS, K

SEILENTHAL, M

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1984年 / 83卷 / 02期

关键词：

D O I：

10.1002/pssa.2210830244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K109 / K111

页数：3

共 10 条

[1] AES AND PES STUDIES OF SEMI-INSULATING POLYCRYSTALLINE SILICON (SIPOS) FILMS [J].

ADACHI, T ;

HELMS, CR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (07) :1617-1621

[2] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].

DONG, D ;

IRENE, EA ;

YOUNG, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823

[3] OBSERVATION OF AMORPHOUS-SILICON REGIONS IN SILICON-RICH SILICON DIOXIDE FILMS [J].

HARTSTEIN, A ;

TSANG, JC ;

DIMARIA, DJ ;

DONG, DW .

APPLIED PHYSICS LETTERS, 1980, 36 (10) :836-837

[4] CHEMICAL-BOND AND RELATED PROPERTIES OF SIO2 .7. STRUCTURE AND ELECTRONIC PROPERTIES OF THE SIOX REGION OF SI-SIO2 INTERFACES [J].

HUBNER, K .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 61 (02) :665-673

[5] HYDROGEN IN SEMI-INSULATING POLYCRYSTALLINE SILICON FILMS [J].

KNOLLE, WR ;

MAXWELL, HR ;

BENENSON, RE .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (08) :4385-4390

[6] A MODEL OF SIPOS DEPOSITION BASED ON INFRARED SPECTROSCOPIC ANALYSIS [J].

KNOLLE, WR ;

MAXWELL, HR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (10) :2254-2259

[7]

LUCOVSKY G, 1981, FUNDAMENTAL PHYSICS, P87

[8] EVOLUTION OF MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON [J].

MESSIER, R ;

ROSS, RC .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6220-6225

[9] ELECTRICAL-CONDUCTIVITY OF SEMI-INSULATING POLYCRYSTALLINE SILICON AND ITS DEPENDENCE UPON OXYGEN-CONTENT [J].

NI, J ;

ARNOLD, E .

APPLIED PHYSICS LETTERS, 1981, 39 (07) :554-556

[10]

OTS KV, ELEKTRONNAYA TEKHN M

← 1 →