LOW-PRESSURE PHOTOCHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE ON INP SUBSTRATES

被引：13

作者：

NISSIM, YI ^{[1
]}

REGOLINI, JL ^{[1
]}

BENSAHEL, D ^{[1
]}

LICOPPE, C ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 08期

关键词：

D O I：

10.1049/el:19880331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：488 / 489

页数：2

共 8 条

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VACCARO, K .

ELECTRONICS LETTERS, 1988, 24 (03) :172-173

[2]

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[4]

NISSIM Y, 1987, E MRS P EDIT PHYSIQU, P213

[5] HIGH MOBILITY N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS BASED ON SIO2-INP INTERFACE [J].

PANDE, KP ;

NAIR, VKR .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (08) :3109-3114

[6] SILICON EPITAXY AT LOW-TEMPERATURE, USING UV CLEANING IN A REDUCED PRESSURE CVD SYSTEM [J].

REGOLINI, JL ;

BENSAHEL, D ;

NISSIM, YI ;

MERCIER, J ;

SCHEID, E ;

PERIO, A ;

ANDRE, E .

ELECTRONICS LETTERS, 1988, 24 (07) :408-409

[7] FILMS FROM THE LOW-TEMPERATURE OXIDATION OF SILANE [J].

TAFT, EA .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (10) :1728-1731

[8]

TARUI Y, 1984, J VAC SCI TECH, V23, P1827

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