LOW-PRESSURE PHOTOCHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE ON INP SUBSTRATES

被引：13

作者：

NISSIM, YI ^{[1
]}

REGOLINI, JL ^{[1
]}

BENSAHEL, D ^{[1
]}

LICOPPE, C ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,CNS,F-38243 MEYLAN,FRANCE

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 08期

关键词：

D O I：

10.1049/el:19880331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：488 / 489

页数：2

共 50 条

[1] MODELING OF THE REACTION FOR LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON DIOXIDE
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