PASSIVATION OF DEEP LEVEL DEFECTS IN MOLECULAR-BEAM EPITAXIAL GAAS BY HYDROGEN PLASMA EXPOSURE

被引：100
作者：
DAUTREMONTSMITH, WC
NABITY, JC
SWAMINATHAN, V
STAVOLA, M
CHEVALLIER, J
TU, CW
PEARTON, SJ
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 17期
关键词：
D O I：
10.1063/1.97433
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1098 / 1100
页数：3
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