DOPING PROPERTIES OF SELECTED IMPURITIES IN HG1-XCDXTE

被引：80
作者：
JOHNSON, ES
SCHMIT, JL
机构：
[1] HONEYWELL INC,RECH CTR,BLOOMINGTON,MN 55420
[2] HONEYWELL INC,RECH CTR,BLOOMINGTON,MN 55420
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1977年 / 6卷 / 01期
关键词：
D O I：
10.1007/BF02660335
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：25 / 38
页数：14
相关论文
共 11 条
[1]  
ANDRIEVS.AI, 1974, SOV PHYS SEMICOND+, V7, P1112
[2]   EPITAXIAL (CDHG)TE INFRARED PHOTOVOLTAIC DETECTORS [J].
COHENSOLAL, G ;
RIANT, Y .
APPLIED PHYSICS LETTERS, 1971, 19 (10) :436-+
[3]   HG-IMPLANTED HG1-XCDXTE INFRARED PHOTOVOLTAIC DETECTORS IN 8- TO 14-MU-M RANGE [J].
FIORITO, G ;
GASPARRINI, G ;
SVELTO, F .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :448-449
[4]   TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J].
FOYT, AG ;
HARMAN, TC ;
DONNELLY, JP .
APPLIED PHYSICS LETTERS, 1971, 18 (08) :321-&
[5]  
Hu S. M., 1973, ATOMIC DIFFUSION SEM, P217
[6]  
LONG D, TOPICS APPLIED PHYSI
[7]  
LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175
[8]   INFRARED PHOTOVOLTAIC DETECTORS FROM ION-IMPLANTED CDXHG1-XTE [J].
MARINE, J ;
MOTTE, C .
APPLIED PHYSICS LETTERS, 1973, 23 (08) :450-452
[9]   ELECTRICAL AND FAR-INFRARED OPTICAL-PROPERTIES OF P-TYPE HG-1-XCD-XTE [J].
SCOTT, W ;
STELZER, EL ;
HAGER, RJ .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1408-1414
[10]   CDCHIHG1-CHITE INFRARED PHOTOVOLTAIC DETECTORS [J].
VERIE, C ;
AYAS, J .
APPLIED PHYSICS LETTERS, 1967, 10 (09) :241-&
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