AN X-RAY TOPOGRAPHIC STUDY OF D-DEFECTS IN SILICON

被引：0

作者：

VYSOTSKAYA, VV

GORIN, SN

SOROKIN, LM

SHEIKHET, EG

机构：

来源：

FIZIKA TVERDOGO TELA | 1987年 / 29卷 / 06期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1858 / 1861

页数：4

共 12 条

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[2]

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[3] THE EFFECT OF DOPING ON THE FORMATION OF SWIRL DEFECTS IN DISLOCATION-FREE CZOCHRALSKI-GROWN SILICON-CRYSTALS [J].

DEKOCK, AJR ;

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[4]

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[5] MICRODEFECTS IN A NON-STRIATED DISTRIBUTION IN FLOATING-ZONE SILICON-CRYSTALS [J].

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VANDENBOOM, MMB .

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[6] VACANCY TYPE MICRODEFECTS IN DISLOCATION-FREE SILICON SINGLE-CRYSTALS [J].

SITNIKOVA, AA ;

SOROKIN, LM ;

TALANIN, IE ;

FALKEVICH, ES ;

SHEIKHET, EG .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1985, 90 (01) :K31-&

[7] ELECTRON-MICROSCOPIC STUDY OF MICRODEFECTS IN SILICON SINGLE-CRYSTALS GROWN AT HIGH-SPEED [J].

SITNIKOVA, AA ;

SOROKIN, LM ;

TALANIN, IE ;

SHEIKHET, EG ;

FALKEVICH, ES .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 81 (02) :433-438

[8] FORMATION OF SELF-DISORDER AGGLOMERATES IN DISLOCATION-FREE SILICON DURING CRYSTAL-GROWTH [J].

TEMPELHOFF, K ;

VANSUNG, N .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02) :441-449

[9]

VESELOVSKAYA NV, 1977, ROST LEGIROVANIE P 2, P284

[10]

VORONKOV VV, 1984, KRISTALLOGRAFIYA+, V29, P1176

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