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ORIENTATION DEPENDENCE OF BUILT-IN SURFACE CHARGE ON THERMALLY OXIDIZED SILICON
被引:42
作者
:
BALK, P
论文数:
0
引用数:
0
h-index:
0
BALK, P
BURKHARD.PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARD.PJ
GREGOR, LV
论文数:
0
引用数:
0
h-index:
0
GREGOR, LV
机构
:
来源
:
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS
|
1965年
/ 53卷
/ 12期
关键词
:
D O I
:
10.1109/PROC.1965.4513
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:2133 / &
相关论文
共 9 条
[1]
EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM
[J].
CHEROFF, G
论文数:
0
引用数:
0
h-index:
0
CHEROFF, G
;
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
;
HOCHBERG, F
论文数:
0
引用数:
0
h-index:
0
HOCHBERG, F
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
:416
-&
[2]
THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
:527
-533
[3]
DELORD JF, 1965, B AMER PHYS SOC, V10, P596
[4]
STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
[J].
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
;
LOGAN, JS
论文数:
0
引用数:
0
h-index:
0
LOGAN, JS
;
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
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BURKHARDT, PJ
;
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
PLISKIN, WA
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
:376
-&
[5]
EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
[J].
KERR, DR
论文数:
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引用数:
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h-index:
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KERR, DR
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
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(04)
:385
-&
[6]
CHEMICAL + AMBIENT EFFECTS ON SURFACE CONDUCTION IN PASSIVATED SILICON SEMICONDUCTORS
[J].
LEHMAN, HS
论文数:
0
引用数:
0
h-index:
0
LEHMAN, HS
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
:422
-&
[7]
THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN
[J].
LIGENZA, JR
论文数:
0
引用数:
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h-index:
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LIGENZA, JR
;
SPITZER, WG
论文数:
0
引用数:
0
h-index:
0
SPITZER, WG
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1960,
14
:131
-136
[8]
NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS
[J].
PLISKIN, WA
论文数:
0
引用数:
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h-index:
0
PLISKIN, WA
;
CONRAD, EE
论文数:
0
引用数:
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CONRAD, EE
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(01)
:43
-&
[9]
PLISKIN WA, TO BE PUBLISHED
←
1
→
共 9 条
[1]
EFFECT OF LOW TEMPERATURE ANNEALING ON SURFACE CONDUCTIVITY OF SI IN SI-SIO2-AL SYSTEM
[J].
CHEROFF, G
论文数:
0
引用数:
0
h-index:
0
CHEROFF, G
;
FANG, F
论文数:
0
引用数:
0
h-index:
0
FANG, F
;
HOCHBERG, F
论文数:
0
引用数:
0
h-index:
0
HOCHBERG, F
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
:416
-&
[2]
THE OXIDATION OF SILICON IN DRY OXYGEN, WET OXYGEN, AND STEAM
[J].
DEAL, BE
论文数:
0
引用数:
0
h-index:
0
DEAL, BE
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1963,
110
(06)
:527
-533
[3]
DELORD JF, 1965, B AMER PHYS SOC, V10, P596
[4]
STABILIZATION OF SIO2 PASSIVATION LAYERS WITH P2O5
[J].
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
;
LOGAN, JS
论文数:
0
引用数:
0
h-index:
0
LOGAN, JS
;
BURKHARDT, PJ
论文数:
0
引用数:
0
h-index:
0
BURKHARDT, PJ
;
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
PLISKIN, WA
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
:376
-&
[5]
EFFECT OF TEMPERATURE + BIAS ON GLASS-SILICON INTERFACES
[J].
KERR, DR
论文数:
0
引用数:
0
h-index:
0
KERR, DR
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
:385
-&
[6]
CHEMICAL + AMBIENT EFFECTS ON SURFACE CONDUCTION IN PASSIVATED SILICON SEMICONDUCTORS
[J].
LEHMAN, HS
论文数:
0
引用数:
0
h-index:
0
LEHMAN, HS
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(04)
:422
-&
[7]
THE MECHANISMS FOR SILICON OXIDATION IN STEAM AND OXYGEN
[J].
LIGENZA, JR
论文数:
0
引用数:
0
h-index:
0
LIGENZA, JR
;
SPITZER, WG
论文数:
0
引用数:
0
h-index:
0
SPITZER, WG
.
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS,
1960,
14
:131
-136
[8]
NONDESTRUCTIVE DETERMINATION OF THICKNESS + REFRACTIVE INDEX OF TRANSPARENT FILMS
[J].
PLISKIN, WA
论文数:
0
引用数:
0
h-index:
0
PLISKIN, WA
;
CONRAD, EE
论文数:
0
引用数:
0
h-index:
0
CONRAD, EE
.
IBM JOURNAL OF RESEARCH AND DEVELOPMENT,
1964,
8
(01)
:43
-&
[9]
PLISKIN WA, TO BE PUBLISHED
←
1
→