INFLUENCE OF THE PIEZOELECTRIC EFFECT ON THE ENERGY-LEVELS OF INGAAS/GAAS STRAINED QUANTUM-WELLS GROWN ON (311)A GAAS

被引：17
作者：
VACCARO, PO
TAKAHASHI, M
FUJITA, K
WATANABE, T
机构：
[1] ATR Optical and Radio Communications Research Laboratories, Kyoto Soraku-gun, 619-02
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 1A期
关键词：
INGAAS; (311)A; PIEZOELECTRICITY; STRAINED LAYER; QUANTUM WELL; PHOTOLUMINESCENCE; MOLECULAR BEAM EPITAXY;
D O I：
10.1143/JJAP.34.L13
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The built-in electric field generated by the piezoelectric effect in In0.2Ga0.8As/GaAs strained quantum wells (SQWs) grown on (311)A GaAs substrates was studied. In contrast to SQWs grown on (100) GaAs substrates, the photoluminescence excitation spectrum shows transitions that are forbidden in the absence of an electric field and the emergence of new energy levels confined by the tilted barrier in the hole bands. The observed features agree with the calculated built-in electric field of 80 kV/cm. Because the high quality of these SQWs, (311)A GaAs substrates come forth as an alternative for investigating the piezoelectric effect in SQWs.
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收藏
页码：L13 / L16
页数：4
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