QUASI-PARTICLE EXCITATIONS IN GAAS1-XNX AND ALAS1-XNX ORDERED ALLOYS

被引:101
作者
RUBIO, A [1 ]
COHEN, ML [1 ]
机构
[1] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV MAT SCI,BERKELEY,CA 94720
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 07期
关键词
D O I
10.1103/PhysRevB.51.4343
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have performed a quasiparticle study of the fundamental excitations in ordered alloys of III-V semiconductors, GaAs1-xNx and AlAs1-xNx. The experimentally observed anomalous redshift in GaAs1-xNx of the direct band edge is explained here by effects arising from the 20% lattice mismatch. The fact that the bottom of the conduction band is mainly dominated by nitrogen leads to a large reduction of the fundamental gap at Γ as the volume increases. This reduction continues until the charge density begins to locate on the arsenic site. Based on this simple scenario, we predict that a similar redshift may be observed in the indirect gap AlAs1-xNx alloys. Also an indirect to direct band-gap transition will be observed for intermediate N concentrations. The possibility of closing the band gap is discussed in terms of the quasiparticle results. © 1995 The American Physical Society.
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页码:4343 / 4346
页数:4
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