REMOTE PLASMA CHEMICAL VAPOR-DEPOSITION OF SILICON-NITRIDE FILMS

被引：0
|
作者：
ALEXANDROV, SE
KOVALGIN, AY
机构：
来源：
JOURNAL DE PHYSIQUE III | 1992年 / 2卷 / 08期
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The relatively new technique of remote plasma enhanced chemical vapour deposition (RPECVD) of silicon nitride films is described. The influence of varying deposition parameters such as the ratios of reactant gases, pressure, temperature, and RF-power on the growth rate is described. Refractive index and amount of bonded hydrogen in the deposited films determined by IR attenuated total reflectance method are studied. The total concentration of bonded hydrogen in the deposited films was in the range 2 - 5 10(22) cm-3. The damage to a gateless GaAs FET after remote plasma deposition of silicon nitride films is negligible.
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页码：1421 / 1429
页数：9
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