INTERFACE CHEMISTRY OF TERNARY SEMICONDUCTORS - LOCAL MORPHOLOGY OF THE HG1-XCDXTE(110)-CR INTERFACE

被引：40

作者：

FRANCIOSI, A ^{[1
]}

PHILIP, P ^{[1
]}

PETERMAN, DJ ^{[1
]}

机构：

[1] MCDONNELL DOUGLAS CORP,MCDONNELL DOUGLAS RES LABS,ST LOUIS,MO 63166

来源：

PHYSICAL REVIEW B | 1985年 / 32卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.32.8100

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8100 / 8107

页数：8

共 23 条

[1] THE STRUCTURE AND PROPERTIES OF METAL-SEMICONDUCTOR INTERFACES [J].

Brillson, L. J. .

SURFACE SCIENCE REPORTS, 1982, 2 (02) :123-326

[2] ROLE OF CATION DISSOCIATION IN SCHOTTKY-BARRIER FORMATION AT II-VI COMPOUND SEMICONDUCTOR METAL INTERFACES [J].

BRUCKER, CF ;

BRILLSON, LJ .

THIN SOLID FILMS, 1982, 93 (1-2) :67-74

[3] RELATION BETWEEN THE ELECTRONIC STATES AND STRUCTURAL-PROPERTIES OF HG1-XCDXTEA [J].

CHEN, AB ;

SHER, A ;

SPICER, WE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1674-1677

[4]

CHEN AB, 1983, J VAC SCI TECHNOL A, V1, P1675

[5] PHOTOEMISSION FROM SURFACE-ATOM CORE LEVELS, SURFACE DENSITIES OF STATES, AND METAL-ATOM CLUSTERS - A UNIFIED PICTURE [J].

CITRIN, PH ;

WERTHEIM, GK .

PHYSICAL REVIEW B, 1983, 27 (06) :3176-3200

[6] CHANGES IN THE LOCAL CHEMICAL-COMPOSITION DURING THE HG1-XCDXTE-AL INTERFACE FORMATION [J].

DANIELS, RR ;

MARGARITONDO, G ;

DAVIS, GD ;

BYER, NE .

APPLIED PHYSICS LETTERS, 1983, 42 (01) :50-52

[7] DEPOSITION OF AU OVERLAYERS ONTO CLEAVED (HG,CD)TE SURFACES [J].

DAVIS, GD ;

BECK, WA ;

BYER, NE ;

DANIELS, RR ;

MARGARITONDO, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02) :546-550

[8] ANODIC OXIDE COMPOSITION AND HG DEPLETION AT THE OXIDE-SEMICONDUCTOR INTERFACE OF HG1-XCDXTE [J].

DAVIS, GD ;

SUN, TS ;

BUCHNER, SP ;

BYER, NE .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (03) :472-476

[9]

DAVIS GD, 1983, J VAC SCI TECHNOL A, V1, P1706

[10] THE BONDING PROPERTIES OF MERCURY CADMIUM TELLURIDE [J].

HARRISON, WA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03) :1672-1673

← 1 2 3 →