MEASUREMENT OF INTRINSIC GATE CAPACITANCES OF SOI MOSFETS

被引：8
作者：
FLANDRE, D [1 ]
VANDEWIELE, F [1 ]
JESPERS, PGA [1 ]
HAOND, M [1 ]
机构：
[1] CTR NATL ETUD TELECOMMUN,F-38243 MEYLAN,FRANCE
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 07期
关键词：
D O I：
10.1109/55.56478
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Results of the measurement of intrinsic gate capacitances of SOI MOSFET's are described for the first time and are shown to provide valuable information for characterization purposes as well as to cast some light on the small- and large-signal modeling of SOI MOSFET's. © 1990 IEEE
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页码：291 / 293
页数：3
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