BOUND EXCITONS IN P-DOPED GAAS QUANTUM WELLS

被引：66

作者：

MILLER, RC

GOSSARD, AC

TSANG, WT

MUNTEANU, O

机构：

来源：

SOLID STATE COMMUNICATIONS | 1982年 / 43卷 / 07期

关键词：

D O I：

10.1016/0038-1098(82)90067-9

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：519 / 522

页数：4

共 12 条

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[7] OBSERVATION OF THE EXCITED-LEVEL OF EXCITONS IN GAAS QUANTUM WELLS [J].

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[8]

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[9] LUMINESCENCE PROPERTIES OF GAAS-GA1-XALX AS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPER-LATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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