THE DEPTH AND ANGULAR-DEPENDENCE OF THE MID-CHANNEL FLUX OF HE IONS IN AL CRYSTALS

被引：1

作者：

SWANSON, ML

JACKMAN, TE

HOWE, LM

QUENNEVILLE, AF

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1982年 / 194卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(82)90505-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：139 / 142

页数：4

共 13 条

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HOWE, LM .

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[10] TRAPPING OF IRRADIATION-INDUCED DEFECTS BY TIN ATOMS IN AN AL-0.03 AT PERCENT-SN CRYSTAL [J].

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PHYSICAL REVIEW B, 1980, 22 (05) :2213-2220

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