GENERALIZED-MODEL FOR THE CLUSTERING OF AS DOPANTS IN SI

被引：63

作者：

GUERRERO, E

POTZL, H

TIELERT, R

GRASSERBAUER, M

STINGEDER, G

机构：

[1] VIENNA TECH UNIV, INST ANALYT CHEM, A-1040 VIENNA, AUSTRIA

[2] SIEMENS AG, CENT RES LABS, MUNICH, GERMANY

[3] LUDWIG BOLTZMANN INST SOLID STATE PHYS, Vienna, AUSTRIA

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1982年 / 129卷 / 08期

关键词：

D O I：

10.1149/1.2124302

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1826 / 1831

页数：6

共 13 条

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