2.2V Operation power heterojunction FET for personal digital cellular telephones

被引：7

作者：

Iwata, N

Inosako, K

Kuzuhara, M

机构：

[1] Kansai Electronics Research Laboratories, NEC Corporation, Otsu, Shiga 520, 9-1

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 25期

关键词：

aluminium gallium arsenide; gallium indium arsenide; field effect transistors; molecular beam epitaxial growth;

D O I：

10.1049/el:19951488

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The authors describe the 950MHz power performance of a 2.2V operation double-doped AlGaAs/InGaAs/AlGaAs heterojunction FET(HJFET) for personal digital cellular telephones. The fabricated HJFET exhibited 600mA/mm maximum drain current, 260mS/mm transconductance and 9.4V gate-to-drain breakdown voltage. A 21mm gate-periphery device operating with a drain bias of 2.2V, demonstrated 1.86W (32.7dBm) output power and 62.8% power-added efficiency with -50.5dBc adjacent channel leakage power at 50kHz off-centre frequency.

引用

页码：2213 / 2215

页数：3

共 6 条

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[2]

INOSAKO K, 1994, IEEE ELECTR DEVICE L, V15, P248, DOI 10.1109/55.294085

[3]

INOSAKO K, UNPUB IEICE T

[4]

IWATA N, 1993, IEEE MTT-S, P1465, DOI 10.1109/MWSYM.1993.276721

[5]

MATSUNAGA K, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P895, DOI 10.1109/IEDM.1994.383269

[6]

ONO H, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P899, DOI 10.1109/IEDM.1994.383268

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