VOLTAGE OSCILLATIONS IN AN ARRAY OF TUNNEL-JUNCTIONS CONTROLLED BY A SCANNING TUNNELING MICROSCOPE GATE AT ROOM-TEMPERATURE

被引：8

作者：

NEJOH, H ^{[1
]}

AONO, M ^{[1
]}

机构：

[1] RIKEN,WAKO,SAITAMA 35101,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 21期

关键词：

D O I：

10.1063/1.111430

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We observe that a current through an array of tunnel junctions can be controlled by a gate at room temperature. Metal islands were formed on an insulating substrate and liquid crystal molecules were placed between these islands. Electrodes were placed 5 mm apart on the substrate and a bias was applied between them. A scanning tunneling microscope (STM) tip which acts as a gate was supported on molecules which act as the central electrodes. When this two-dimensional tunnel junction array was current biased, the tunnel current flow across this array could be controlled by the gate voltage at room temperature.

引用

页码：2803 / 2805

页数：3

共 14 条

[1] THE CHARGE-EFFECT TRANSISTOR [J].