DISSOCIATION-WIDTH DEPENDENT RADIATIVE RECOMBINATION OF ELECTRONS AND HOLES AT WIDELY SPLIT DISLOCATIONS IN SILICON

被引：58

作者：

SAUER, R

KISIELOWSKIKEMMERICH, C

ALEXANDER, H

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

[2] UNIV COLOGNE,INST PHYS,MET PHYS ABT 2,D-5000 COLOGNE 41,FED REP GER

来源：

PHYSICAL REVIEW LETTERS | 1986年 / 57卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.57.1472

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：1472 / 1475

页数：4

共 13 条

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[9] DISLOCATION-RELATED PHOTOLUMINESCENCE IN SILICON [J].

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[10] DEPENDENCE OF PHOTO-LUMINESCENCE ON TEMPERATURE IN DISLOCATED SILICON-CRYSTALS [J].

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