OPTICAL-ABSORPTION AND PHASE-TRANSITIONS IN CU-III-VI2 COMPOUND SEMICONDUCTORS AT HIGH-PRESSURE

被引：39

作者：

GONZALEZ, J

RINCON, C

机构：

[1] Departamento de Física, Facultad de Ciencias, Universidad de Los Andes, Mérida

来源：

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS | 1990年 / 51卷 / 09期

关键词：

band structure; high pressure; optical absorption; phase transitions; Ternary chalcopyrite semiconductors;

D O I：

10.1016/0022-3697(90)90070-V

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The optical absorption edge of CuInTe2, CuGaS2 and CuGaSe2 single crystals was measured as a function of hydrostatic pressure up to 20 GPa. In all cases the energy gap increases with pressure. From the data the pressure dependence of the energy gap ( dEg dP) was determined as 22 meV GPa-1 for CuInTe2, 40 meV GPa-1 for CuGaS2 and 50 meV GPa-1 for CuGaSe2. From changes in the light transmission characteristic of the samples under pressure, structural first-order transitions were observed at 2.8 GPa for CuInTe2, 16.5 GPa for CuGaS2 and 13.6 GPa for CuGaSe2. Also, a new metastable semiconducting phase was formed in pressure-quenched CuGaS2 samples. © 1990.

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页码：1093 / 1097

页数：5

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