PROPERTIES OF CDTE P-N DIODES PREPARED BY AL VAPOR-DIFFUSION

被引：16

作者：

GU, J ^{[1
]}

KITAHARA, T ^{[1
]}

FUJITA, S ^{[1
]}

SAKAGUCHI, T ^{[1
]}

机构：

[1] KYOTO UNIV,FAC ENGN,DEPT ELECT ENGN,KYOTO,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1975年 / 14卷 / 04期

关键词：

D O I：

10.1143/JJAP.14.499

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：499 / 507

页数：9

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