RELAXATION OSCILLATIONS IN QUASI-SINGLE-MODE SEMICONDUCTOR-LASERS

被引：1
作者：
ZAIBEL, R
CHERNOBROD, BM
PRIOR, YH
机构：
[1] Department of Chemical Physics, Weizmann Institute of Science
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1994年 / 30卷 / 09期
关键词：
D O I：
10.1109/3.309868
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The intensity-relaxation-oscillation (RO) and damping rates, and the laser linewidth are measured and analyzed for a semiconductor laser under quasi-single-mode conditions. The RO frequency and the laser-linewidth dependence on laser power are measured, and are described well by the Henry single-mode theory. The relaxation-oscillation damping rate, however, shows a significant deviation from the expected power dependence, and is found to depend on the effective number of idle modes, and the fraction of energy in such modes. The observation is explained very well by a generalized quasi-single-mode theory that accounts for the collective contribution of the idle modes.
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收藏
页码：2081 / 2086
页数：6
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