SELF-LIMITING AND STEP-PROPAGATING NATURE OF GAAS ATOMIC LAYER EPITAXY REVEALED BY ATOMIC-FORCE MICROSCOPY

被引：4
|
作者：
YOKOYAMA, H
TANIMOTO, M
SHINOHARA, M
INOUE, N
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
APPLIED SURFACE SCIENCE | 1994年 / 82-3卷
关键词：
D O I：
10.1016/0169-4332(94)90212-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The self-limiting and step-propagating nature of GaAs atomic layer epitaxy (ALE) is verified by using atomic force microscopy (AFM). AFM measurements reveal that the GaAs surface having a monolayer-height step structure does not change regardless of the trimethylgallium (TMG) flow rate at the ALE growth condition. This indeed confirms the self-limiting nature of ALE. Moreover, it is found that lateral growths such as step-propagation and two-dimensional nucleation take place in ALE. The TMG migration length of Group-III species is evaluated to be as large as several hundred nanometers in spite of the low temperature growth at 440-degrees-C. The undecomposed TMG on As-stabilized surface is responsible for the large migration length in ALE.
引用
收藏
页码：158 / 163
页数：6
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