SELECTIVE POROUS SILICON FORMATION IN BURIED P+ LAYERS

被引：20

作者：

TSAO, SS ^{[1
]}

MYERS, DR ^{[1
]}

GUILINGER, TR ^{[1
]}

KELLY, MJ ^{[1
]}

DATYE, AK ^{[1
]}

机构：

[1] UNIV NEW MEXICO,DEPT CHEM & NUCL ENGN,ALBUQUERQUE,NM 87131

来源：

JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 10期

关键词：

D O I：

10.1063/1.339086

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：4182 / 4186

页数：5

共 12 条

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[2]

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[4] AN EXPERIMENTAL AND THEORETICAL-STUDY OF THE FORMATION AND MICROSTRUCTURE OF POROUS SILICON [J].

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[5] LARGE AREA, UNIFORM SILICON-ON-INSULATOR USING A BURIED LAYER OF OXIDIZED POROUS SILICON [J].

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[6] CRYSTALLINE QUALITY OF SILICON LAYER FORMED BY FIPOS TECHNOLOGY [J].

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[7] A NEW SILICON-ON-INSULATOR STRUCTURE USING A SILICON MOLECULAR-BEAM EPITAXIAL-GROWTH ON POROUS SILICON [J].

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[8] 100-MUM-WIDE SILICON-ON-INSULATOR STRUCTURES BY SI MOLECULAR-BEAM EPITAXY GROWTH ON POROUS SILICON [J].

LIN, TL ;

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[9]

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[10]

TENHUNEN HA, 1986, THESIS CORNELL U

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