GAAS/ALGAAS QUANTUM WELL STRUCTURES GROWN BY MOVPE

被引：0
作者：
LEITCH, AWR
VERMAAK, JS
EHLERS, HL
RAUBENHEIMER, D
机构：
来源：
SOUTH AFRICAN JOURNAL OF SCIENCE | 1988年 / 84卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
引用
收藏
页码：708 / 710
页数：3
相关论文
共 50 条
[21]   HIGH-QUALITY GAAS/ALGAAS QUANTUM-WELLS ON GAAS (111)B SUBSTRATES GROWN BY MOVPE [J].
KATO, K ;
HASUMI, Y ;
KOZEN, A ;
TEMMYO, J .
GALLIUM ARSENIDE AND RELATED COMPOUNDS 1988, 1989, :169-170
[22]   Selective growth of MOVPE on AlGaAs/GaAs patterned substrates for quantum nano-structures [J].
Sakuma, M ;
Fukui, T ;
Kumakura, K ;
Motohisa, J .
CONTROL OF SEMICONDUCTOR SURFACES AND INTERFACES, 1997, 448 :259-263
[23]   INP, GAINAS AND QUANTUM-WELL STRUCTURES GROWN BY ADDUCT MOVPE [J].
SCHOLZ, F ;
WIEDEMANN, P ;
NERZ, U ;
BENZ, KW ;
TRANKLE, G ;
LACH, E ;
FORCHEL, A ;
LAUBE, G ;
WEIDLEIN, J .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :564-570
[24]   SINGLE QUANTUM WELL TRANSISTOR WITH MODULATION DOPED AlGaAs/GaAs/AlGaAs STRUCTURES. [J].
Miyatsuji, K. ;
Hihara, H. ;
Hamaguchi, C. .
1600, (01)
[25]   LARGE AREA GROWTH OF EXTREMELY UNIFORM ALGAAS/GAAS QUANTUM WELL STRUCTURES FOR LASER APPLICATIONS BY EFFECTIVE LP-MOVPE [J].
SCHMITZ, D ;
STRAUCH, G ;
KNAUF, J ;
JURGENSEN, H ;
HEYEN, M ;
WOLTER, K .
JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :312-317
[26]   QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GAAS-ALGAAS MULTIPLE QUANTUM-WELLS [J].
WHITEHEAD, M ;
PARRY, G ;
ROBERTS, JS ;
MISTRY, P ;
WA, PLKM ;
DAVID, JPR .
ELECTRONICS LETTERS, 1987, 23 (20) :1048-1050
[27]   QUANTUM CONFINED STARK SHIFTS IN MOVPE-GROWN GaAs-AlGaAs MULTIPLE QUANTUM WELLS. [J].
Whitehead, M. ;
Parry, G. ;
Roberts, J.S. ;
Mistry, P. ;
Li Kam Wa, P. ;
David, J.P.R. .
1600, (23)
[28]   LARGE AREA GROWTH OF EXTREMELY UNIFORM ALGAAS/GAAS QUANTUM WELL STRUCTURES FOR LASER APPLICATIONS BY EFFECTIVE LP-MOVPE [J].
SCHMITZ, D ;
STRAUCH, G ;
KNAUF, J ;
JURGENSEN, H ;
HEYEN, M .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (04) :C197-C197
[29]   Polarization sensitive lateral photoconductivity in GaAs/AlGaAs quantum well based structures on low-temperature grown GaAs(001) [J].
Arora, Ashish ;
Ghosh, Sandip ;
Arora, B. M. ;
Malzer, Stefan ;
Doehler, Gottfried .
APPLIED PHYSICS LETTERS, 2010, 97 (08)
[30]   InAs/GaAs multiple quantum dot structures grown by LP-MOVPE [J].
Pangrác, J ;
Oswald, J ;
Hulicius, E ;
Melichar, K ;
Vorlícek, V ;
Drbohlav, I ;
Simecek, T .
THIN SOLID FILMS, 2000, 380 (1-2) :101-104
12345