HOLE TRAP CREATION IN SIO2 BY PHOSPHORUS ION PENETRATION OF POLYCRYSTALLINE SILICON

被引：15

作者：

SMELTZER, RK

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1467 / 1470

页数：4

共 9 条

[1] ORIGIN OF NON-GAUSSIAN PROFILES IN PHOSPHORUS-IMPLANTED SILICON [J].

BLOOD, P ;

DEARNALEY, G ;

WILKINS, MA .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5123-5128

[2] HOLE TRAPPING IN THE BULK OF SIO2 LAYERS AT ROOM-TEMPERATURE [J].

DEKEERSMAECKER, RF ;

DIMARIA, DJ .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :532-539

[3] INTRODUCTION RATES AND ANNEALING OF DEFECTS IN ION-IMPLANTED SIO2 LAYERS ON SI [J].

EERNISSE, EP ;

NORRIS, CB .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (12) :5196-5205

[4]

GOETZBERGER A, 1974, J JPN SOC APPL PHYS, V43, P289

[5]

HOFKER WK, 1975, PHILLIPS RES REPTS S, V8, P59

[6] DEPTH PROFILING OF N-TYPE DOPANTS IN SI AND GAAS USING CS+ BOMBARDMENT NEGATIVE SECONDARY ION MASS-SPECTROMETRY IN ULTRAHIGH-VACUUM [J].

MAGEE, CW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (04) :660-663

[7] CORRELATION BETWEEN LATTICE DAMAGE AND ELECTRICAL ACTIVATION OF PHOSPHORUS-IMPLANTED SILICON [J].

MIYAO, M ;

YOSHIHIRO, N ;

TOKUYAMA, T ;

MITSUISHI, T .

JOURNAL OF APPLIED PHYSICS, 1978, 49 (04) :2573-2575

[8] CHANNELING OF IMPLANTED PHOSPHORUS THROUGH POLYCRYSTALLINE SILICON [J].

SEIDEL, TE .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :447-449

[9] NATURE AND ANNEALING BEHAVIOR OF DISORDERS IN ION-IMPLANTED SILICON [J].

TOKUYAMA, T ;

MIYAO, M ;

YOSHIHIRO, N .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (08) :1301-1315

← 1 →