HOLE TRAP CREATION IN SIO2 BY PHOSPHORUS ION PENETRATION OF POLYCRYSTALLINE SILICON

被引：15

作者：

SMELTZER, RK

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1982年 / 29卷 / 06期

关键词：

D O I：

10.1109/TNS.1982.4336388

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：1467 / 1470

页数：4

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