ELECTRON-MICROSCOPY STUDIES OF ALLOYING BEHAVIOR OF AU ON GAAS

被引：37

作者：

MAGEE, TJ ^{[1
]}

PENG, J ^{[1
]}

机构：

[1] STANFORD RES INST,MENLO PK,CA 94025

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 32卷 / 02期

关键词：

D O I：

10.1002/pssa.2210320244

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：695 / 700

页数：6

相关论文

共 13 条

[1] CHARACTERIZATION OF SILICON METALLIZATION SYSTEMS USING ENERGETIC ION BACKSCATTERING
BORDERS, JA
PICRAUX, ST
[J]. PROCEEDINGS OF THE IEEE, 1974, 62 (09) : 1224 - 1231
[2] BORDERS JA, 1974, APPL ION BEAMS METAL, P179
[3] ALLOYING BEHAVIOR OF AU AND AU-GE ON GAAS
GYULAI, J
MAYER, JW
RODRIGUEZ, V
YU, AYC
GOPEN, HJ
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3578 - +
[4] LOW-TEMPERATURE MIGRATION OF SILICON THROUGH METAL FILMS IMPORTANCE OF SILICON-METAL INTERFACE
HIRAKI, A
LUGUJJO, E
NICOLET, MA
MAYER, JW
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1971, 7 (02): : 401 - &
[5] LOW-TEMPERATURE MIGRATION OF SILICON IN METAL-FILMS ON SILICON SUBSTRATES STUDIED BY BACKSCATTERING TECHNIQUES
HIRAKI, A
LUGUJJO, E
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01): : 155 - &
[6] LOW-TEMPERATURE MIGRATION OF SILICON IN THIN LAYERS OF GOLD AND PLATINUM
HIRAKI, A
NICOLET, MA
MAYER, JW
[J]. APPLIED PHYSICS LETTERS, 1971, 18 (05) : 178 - &
[7] FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES
HIRAKI, A
MAYER, JW
LUGUJJO, E
[J]. JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) : 3643 - &
[8] CONTROLLED SECTIONING TECHNIQUE FOR SMALL GALLIUM-ARSENIDE SAMPLES
MAGEE, TJ
COMER, JJ
[J]. REVIEW OF SCIENTIFIC INSTRUMENTS, 1972, 43 (08) : 1218 - &
[9] ANALYSIS OF THIN-FILM STRUCTURES WITH NUCLEAR BACKSCATTERING AND X-RAY-DIFFRACTION
MAYER, JW
TU, KN
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1974, 11 (01): : 86 - 93
[10] MAYER JW, 1974, APPLICATION ION BEAM, P141