ALGAAS/GAAS STRIPE LASER-DIODES FABRICATED ON SI SUBSTRATES BY MOCVD

被引：19

作者：

SAKAI, S ^{[1
]}

SHIRAISHI, H ^{[1
]}

UMENO, M ^{[1
]}

机构：

[1] NAGOYA INST TECHNOL, DEPT ELECT & COMP ENGN, SHOWA KU, NAGOYA, AICHI 466, JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1987年 / 23卷 / 06期

关键词：

D O I：

10.1109/JQE.1987.1073468

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1080 / 1084

页数：5

共 21 条

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