ELECTRICAL AND THERMAL-STABILITY OF AUGENI OHMIC CONTACTS TO GAAS FABRICATED WITH INSITU RF SPUTTER CLEANING

被引：14

作者：

CALLEGARI, A

LACEY, D

PAN, ETS

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 05期

关键词：

D O I：

10.1016/0038-1101(86)90073-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：523 / 527

页数：5

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