RADIATION-INDUCED MOBILITY DEGRADATION IN P-CHANNEL DOUBLE-DIFFUSED METAL-OXIDE-SEMICONDUCTOR POWER TRANSISTORS AT 300-K AND 77-K

The effects of radiation-induced interface-trapped charge and oxide-trapped charge on the inversion-layer hole mobility in p-channel double-diffused metal-oxide-semiconductor power transistors at 300 and 77 K are investigated. The mobility degradation is more pronounced at 77 K than at 300 K, due to increased importance of Coulomb scattering from trapped charge when phonon scattering is significantly reduced. The mobility degradation is primarily due to interface-trapped charge, but the effects of oxide-trapped charge must be taken into account in order to properly describe the mobility behavior, particularly at cryogenic temperatures.