INGAP/GAAS SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：12

作者：

LEE, HY

CROOK, MD

HAFICH, MJ

QUIGLEY, JH

ROBINSON, GY

LI, D

OTSUKA, N

机构：

[1] COLORADO STATE UNIV,DEPT ELECT ENGN,FT COLLINS,CO 80523

[2] PURDUE UNIV,SCH MAT ENGN,W LAFAYETTE,IN 47907

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 22期

关键词：

D O I：

10.1063/1.102050

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2322 / 2324

页数：3

共 11 条

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[5]

PANISH MB, 1986, PROGR CRYSTAL GROWTH, V123, P1

[6] GROWTH OF INGAP ON GAAS USING GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

QUIGLEY, JH ;

HAFICH, MJ ;

LEE, HY ;

STAVE, RE ;

ROBINSON, GY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (02) :358-360

[7] HIGH-QUALITY GAAS/GA0.49IN0.51 P SUPERLATTICES GROWN ON GAAS AND SILICON SUBSTRATES BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

RAZEGHI, M ;

MAUREL, P ;

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STOBBS, WM ;

KELLY, M .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (09) :4511-4514

[8] INGAP/INGAAIP DOUBLE-HETEROSTRUCTURE AND MULTIQUANTUM-WELL LASER-DIODES GROWN BY MOLECULAR-BEAM EPITAXY [J].

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JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :1713-1719

[9] HIGH-RESOLUTION X-RAY-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDIES OF INGAAS/INP SUPERLATTICES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY [J].

VANDENBERG, JM ;

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TEMKIN, H .

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[10] INTRINSIC STRAIN AT LATTICE-MATCHED GA0.47IN0.53AS/INP INTERFACES AS STUDIED WITH HIGH-RESOLUTION X-RAY-DIFFRACTION [J].

VANDENBERG, JM ;

PANISH, MB ;

TEMKIN, H ;

HAMM, RA .

APPLIED PHYSICS LETTERS, 1988, 53 (20) :1920-1922

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