GAAS MICROWAVE-POWER FET

被引：31

作者：

FUKUTA, M ^{[1
]}

SUYAMA, K ^{[1
]}

SUZUKI, H ^{[1
]}

ISHIKAWA, H ^{[1
]}

机构：

[1] FUJITSU LABS LTD,SEMICOND LAB,NAKAHARA KU,KAWASAKI,JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1976年 / 23卷 / 04期

关键词：

D O I：

10.1109/T-ED.1976.18416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：388 / 394

页数：7

共 14 条

[1]

BLOCKER TG, 1974, IEEE INT ELECTRON DE, P288

[2]

CAMISA RL, 1975, ISSCC DIG TECH PAPER, P70

[3]

CHEN JTC, 1974, IEEE INT ELECTRON DE, P299

[4]

DRIVER MC, 1973, IEEE INT ELECTRON DE, P393

[5]

FUKUTA M, 1973, ISSCC DIG TECH PAPER, P84

[6]

FUKUTA M, 1974, IEEE INT ELECTRON DE, P285

[7] CHARACTERIZATION OF NONLINEARITIES IN MICROWAVE DEVICES AND SYSTEMS [J].

HEITER, GL .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1973, MT21 (12) :797-805

[8] VAPOR-PHASE EPITAXIAL-GROWTH OF GAAS IN A NITROGEN ATMOSPHERE [J].

IHARA, M ;

DAZAI, K ;

RYUZAN, O .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) :528-531

[9] DESIGN AND PERFORMANCE OF MICROWAVE AMPLIFIERS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

LIECHTI, CA ;

TILLMAN, RL .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1974, MT22 (05) :510-517

[10]

NAPOLI L, 1973, IEEE INT MICROWAVE S, P230

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