ERBIUM DOPING OF MOLECULAR-BEAM EPITAXIAL GAAS

被引：89

作者：

SMITH, RS

MULLER, HD

ENNEN, H

WENNEKERS, P

MAIER, M

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 01期

关键词：

D O I：

10.1063/1.98127

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：49 / 51

页数：3

共 10 条

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[5] INVESTIGATION OF TRAP LEVELS IN GAAS SCHOTTKY DIODES BY ADMITTANCE SPECTROSCOPY [J].

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[6]

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[7]

MULLER HD, 1986, J APPL PHYS, V59, P2210, DOI 10.1063/1.336360

[8] PHOTOLUMINESCENCE OPTIMIZATION AND CHARACTERISTICS OF THE RARE-EARTH ELEMENT ERBIUM IMPLANTED IN GAAS, INP, AND GAP [J].

POMRENKE, GS ;

ENNEN, H ;

HAYDL, W .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (02) :601-610

[9] NEODYMIUM COMPLEXES IN GAP SEPARATED BY PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY [J].

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ENNEN, H ;

MULLER, HD .

JOURNAL OF APPLIED PHYSICS, 1986, 59 (04) :1202-1204

[10]

WENNEKERS P, 1984, 166TH EL SOC M STAT

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