NEGATIVE MAGNETORESISTANCE IN SI ATOMIC-LAYER-DOPED GAAS

被引：4

作者：

GOTO, H ^{[1
]}

SHI, W ^{[1
]}

SUZUKI, T ^{[1
]}

SAWAKI, N ^{[1
]}

ITO, H ^{[1
]}

HARA, K ^{[1
]}

机构：

[1] NIPPONDEPSO CO LTD,DEPT RES & DEV,KARIYA,AICHI 448,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1995年 / 150卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)01021-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Magnetoresistance of a Si atomic-layer-doped (delta-doped) GaAs is measured to study the transport properties of the delta-doped structure. The magnetoresistance decreases as the temperature is lowered and the depth of the delta-doped layer, i.e., the distance between the surface and the delta-doped layer, becomes less than 300 nm. Negative magnetoresistance is observed below 80 K in a sample having a doping density of 1.67 x 10(12) cm(-2) and a delta-doped layer depth of 40 nm. The conduction channel in the delta-doped structure consists of two parts, the quantized states in the conduction band and the impurity band. The origin of the negative magnetoresistance is suggested to be the conduction in the inhomogeneous potential due to localized impurity potential.

引用

页码：271 / 276

页数：6

共 8 条

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