PREPARATION OF ZNSTM FILMS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING THULIUM BETA-DIKETONATES AS DOPANTS

被引：6

作者：

HARA, K

TOMINAGA, S

TAKANO, A

DANTANI, K

YOSHINO, J

KUKIMOTO, H

机构：

[1] Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, Midori-ku, Yokohama, 227

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 12A期

关键词：

MOCVD; ZNSTM; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; X-RAY DIFFRACTION;

D O I：

10.1143/JJAP.31.L1661

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnS:Tm films have been successfully prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD) by the use of beta-diketonates of Tm, tris(dipivaloylmethanato)thulium and tris(hexafluoroacetylacetonato) thulium, as the dopants. The Tm concentration can be controlled by the Tm source temperature. Undoped and lightly Tm-doped films are polycrystals of zinc blende structure with a preferential growth direction oriented towards [111]. On the other hand, heavily Tm-doped films have been found to crystallize in the wurtzite structure. The ZnS:Tm films show blue photoluminescence and electroluminescence due to the transitions of f-electrons in Tm3+ ions.

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收藏

页码：L1661 / L1664

页数：4

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